TU-TESL

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According to foreign media reports, expert Nexperia introduced the first high-power Gan FET with the technology of Gan on silicon. "Nexperia is ready to enter the high-voltage field, so it launched this strategic initiative," said Toni versluijs, general manager of Nexperia's MOS discrete device business group. Now, we are able to provide technologies for power semiconductor applications in electric vehicles (xevs). Our Gan technology has been able to be mass produced to meet the needs of mass applications. The automotive industry is a focus area of Nexperia's attention. With electric vehicles replacing traditional internal combustion engines as the preferred tool for personal and public transport, it is expected that the industry will grow significantly in the next 20 years. " The process can generate Gan thick epitaxial layer on large-scale silicon substrate and obtain appropriate epitaxial properties. Therefore, the standard 150 mm wafer production line can be used for primary production, with the scalability required for mass production and cost advantages. The gate voltage of 650V gan063-650wsa is ± 20V, and the operating temperature is between - 55 and + 175 ° C. The product features that the on resistance is as low as 60m Ω, which can reduce loss, support frequency switching and improve power efficiency. It is important that the product is packaged in the industry standard TO-247, which is more convenient for designers to operate and improve product performance. Gan063-650wsa Gan field effect transistor is the first product of Nexperia Gan series equipment, which is suitable for automobile, communication infrastructure and industrial fields.